NDLI: Dopant selection rules for extrinsic tunability of HfO RRAM characteristics: A systematic study

Content Provider	IEEE Xplore Digital Library
Author	Liang Zhao Seung-Wook Ryu Hazeghi, A. Duncan, D. Magyari-Kope, B. Nishi, Y.
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA (Liang Zhao; Seung-Wook Ryu; Hazeghi, A.; Duncan, D.; Magyari-Kope, B.; Nishi, Y.)
Abstract	Recently, resistive random access memory (RRAM) has been explored as a promising technology for applications including on-chip memories, 3D-FPGA and neuromorphic computing systems. For systems with RRAM integration, it is beneficial to have better control of device characteristics to provide large design space and advanced functionalities. For example, in order to mimic the human nervous system with a complex hierarchy, it is desirable to develop multiple, well-separated RRAM characteristics on a single chip. However, intrinsic tuning of device parameters is subject to process restrictions and performance trade-off. In this paper, we present the first systematic approach to understand and utilize the doping effects for tuning RRAM characteristics. HfOx-based RRAM devices with 5 different dopants are fabricated to demonstrate the substantial tunability of key parameters including forming voltage, SET voltage and ON/OFF ratio. To explain the experimental observations, detailed ab initio calculations are performed to model the dopant-vacancy and dopant-filament interactions. The effects of 12 candidate dopants on forming and switching processes are analyzed to provide universal guidelines for dopant selection. Based on the improved tunability, novel design methodologies are further proposed to enable high-performance and multi-level RRAM devices.
Sponsorship	IEEE Electron Devices Soc.
File Size	4666043
File Format	PDF
ISBN	9781467352260
ISSN	21589682
e-ISBN	9784863483477
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	Hafnium compounds Doping Switches Nickel Semiconductor process modeling Zirconium Silicon
Content Type	Text
Resource Type	Article

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