NDLI: Quantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETs

Content Provider	IEEE Xplore Digital Library
Author	Eneman, G. Brunco, D.P. Roussel, P.J. Hellings, G. Kubicek, S. Horiguchi, N. Collaert, N. Thean, A.
Copyright Year	2013
Description	Author affiliation: GLOBALFOUNDRIES, Ghent, Belgium (Brunco, D.P.) \|\| Imec, Leuven, Belgium (Eneman, G.; Roussel, P.J.; Hellings, G.; Kubicek, S.; Horiguchi, N.; Collaert, N.; Thean, A.)
Abstract	We calculate band offsets for FinFETs with strained SiGeand strained InGaAs-channels on strain relaxed buffers (SRB) and provide specific guidelines to optimize quantum wells, metal gate work functions, and mobilities for group-IV and group-III/V devices. Quantum well carrier confinement of 200 meV (or greater) for the channel strongly improves DIBL and SS for 10 nm-node FinFETs. Such quantum wells can be achieved for the following combinations: a strained-Si channel nFinFET on a $Si_{0.6}Ge_{0.4}$ SRB; a strained $Si_{0.4}Ge_{0.6}$ channel pFinFET on a Si substrate; or an $In_{0.53}Ga_{0.47}As$ channel nFinFET on $In_{0.52}Al_{0.48}As/InP.$ When increasing the In% above 70% for InGaAs channel nFETs, sufficient band offset is also achieved when the channel is directly grown on an InP or an $In_{0.4}Ga_{0.6}As$ SRB. Both nand pFinFETs with SiGe-channels require n-type work function metals, while p-type work functions are needed for InGaAs-channel nFinFETs. Therefore a dual-work function gate scheme is required to co-integrate InGaAs nFETs and SiGe pFETs.
Sponsorship	IEEE Electron Devices Soc.
File Size	804635
File Format	PDF
ISBN	9781467352260
ISSN	21589682
e-ISBN	9784863483477
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	FinFETs Silicon Silicon germanium Indium phosphide Photonic band gap Metals Indium gallium arsenide
Content Type	Text
Resource Type	Article

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