NDLI: A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge

Content Provider	IEEE Xplore Digital Library
Author	Kyung-Do Kim Min-Kyu Jeong Sung-Min Cho Ho-Jung Kang Byung-Jun Jun Jae-Bum Kim Kang-Sik Choi Seon-Yong Cha Jung-Hoon Lee Jae-Goan Jeong Sung-Joo Hong Jong-Ho Lee
Copyright Year	2013
Description	Author affiliation: Sch. of EECS & ISRC, Seoul Nat. Univ., Seoul, South Korea (Kyung-Do Kim; Min-Kyu Jeong; Sung-Min Cho; Ho-Jung Kang; Jong-Ho Lee) \|\| R&D Div., SK hynix Inc., Icheon, South Korea (Byung-Jun Jun; Jae-Bum Kim; Kang-Sik Choi; Seon-Yong Cha; Jung-Hoon Lee; Jae-Goan Jeong; Sung-Joo Hong)
Abstract	To reduce TSV coupling noise, a new guard-ring technique is proposed and implemented experimentally. We design the $n^{+}/n^{-}$ well guard-ring butted to the TSV dielectric surrounding the TSV and utilize the inversion layer induced by a positive interface charge as a shield layer. The interface trap density responsible for the interface charge between the TSV dielectric and Si substrate was extracted. Proposed technique reduces the coupling noise by ~3 times.
Sponsorship	IEEE Electron Devices Soc.
File Size	1007408
File Format	PDF
ISBN	9781467352260
ISSN	21589682
e-ISBN	9784863483477
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	Through-silicon vias Dielectrics Noise Couplings Capacitance-voltage characteristics Substrates Current measurement
Content Type	Text
Resource Type	Article

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A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge