NDLI: Role of oxygen vacancies in V/sub FB//V/sub t/ stability of pFET metals on HfO/sub 2/

Content Provider	IEEE Xplore Digital Library
Author	Cartier, E. McFeely, F.R. Narayanan, V. Jamison, P. Linder, B.P. Copel, M. Paruchuri, V.K. Basker, V.S. Haight, R. Lim, D. Carruthers, R. Shaw, T. Steen, M. Sleight, J. Rubino, J. Deligianni, H. Guha, S. Jammy, R. Shahidi, G.
Copyright Year	2005
Description	Author affiliation: IBM Semicond. R&D Center, Yorktown Heights, NY, USA (Cartier, E.; McFeely, F.R.; Narayanan, V.)
Abstract	We demonstrate experimentally that the flatband/threshold voltages (V/sub FB//V/sub t/) of pFET metal gates are strongly dependent on the post-deposition annealing conditions of the gate stacks. By varying the temperature and the O/sub 2/ partial pressure during post-deposition N/sub 2//O/sub 2/ and/or forming gas annealing (FGA) with Re, Ru and Pt, the gate stack V/sub FB/ can change by as much as 750 mV. However, using Re as an example, it is shown that conditions can be optimized and V/sub FB//V/sub t/-tuning for pFETs can be achieved for aggressively scaled stacks. It is proposed that charge transfer from oxygen vacancies to the gate electrode, possible only for high workfunction metal gates, leads to the formation of a dipole layer near the gate which can shift V/sub FB//V/sub t/. The results indicate that V/sub FB//V/sub t/ control remains a formidable processing challenge with high workfunction metals on HfO/sub 2/.
Sponsorship	Japan Soc. of Appl. Phys. IEEE Electron Devices Soc
Starting Page	230
Ending Page	231
File Size	481924
Page Count	2
File Format	PDF
ISBN	4900784001
DOI	10.1109/.2005.1469279
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-14
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	Oxygen Stability Hafnium oxide Channel bank filters Annealing Electrodes MOS capacitors Capacitance Temperature Voltage
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in