NDLI: A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices

Content Provider	IEEE Xplore Digital Library
Author	Chung, S.S. Liu, Y.R. Yeh, C.F. Wu, S.R. Lai, C.S. Chang, T.Y. Ho, J.H. Liu, C.Y. Huang, C.T. Tsai, C.T.
Copyright Year	2005
Description	Author affiliation: Dept. of Electron. Eng., Nat. Chiao Tung Univ., Taiwan (Chung, S.S.; Liu, Y.R.)
Abstract	In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge outdiffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.
Sponsorship	Japan Soc. of Appl. Phys. IEEE Electron Devices Soc
Starting Page	86
Ending Page	87
File Size	570840
Page Count	2
File Format	PDF
ISBN	4900784001
DOI	10.1109/.2005.1469222
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-14
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	Hot carriers Niobium compounds Titanium compounds CMOS technology Silicon germanium Germanium silicon alloys Degradation Charge pumps Temperature sensors Temperature dependence
Content Type	Text
Resource Type	Article

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