NDLI: Fully working high performance multi-channel field effect transistor (McFET) SRAM cell on bulk Si substrate using TiN single metal gate

Content Provider	IEEE Xplore Digital Library
Author	Sung Min Kim Eun Jung Yoon Min Sang Kim Chang Woo Oh Sung Dae Suk Ming Li Sung Young Lee Kyoung Hwan Yeo Sung Hwan Kim Dong Uk Choe Dong-Won Kim Donggun Park Kinam Kim Byung-il Ryu
Copyright Year	2005
Description	Author affiliation: Semicond. R&D Center, Samsung Electron. Co., Kyoungi-Do, South Korea (Sung Min Kim; Eun Jung Yoon; Min Sang Kim; Chang Woo Oh; Sung Dae Suk; Ming Li; Sung Young Lee; Kyoung Hwan Yeo; Sung Hwan Kim; Dong Uk Choe; Dong-Won Kim; Donggun Park; Kinam Kim; Byung-il Ryu)
Abstract	We demonstrate for the first time high performance titanium nitride (TiN) single metal gate 65nm CMOS McFET (multichannel field effect transistor) SRAM cell transistor on bulk Si wafer. This single metal gate McFET shows suitable threshold voltage (VT) and excellent transistor characteristics of SS (sub-threshold swing) and DIBL (drain induced barrier lowering) with V/sub TN/ =+0.3V and V/sub TP/=-0.3V. The SRAM cell with this CMOS McFET, high static noise margin (SNM) of 350mV is achieved at 1.0V.
Sponsorship	Japan Soc. of Appl. Phys. IEEE Electron Devices Soc
Starting Page	196
Ending Page	197
File Size	721249
Page Count	2
File Format	PDF
ISBN	4900784001
DOI	10.1109/.2005.1469265
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-14
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	FETs Random access memory Tin Electrodes Threshold voltage Fabrication Substrates FinFETs Manufacturing processes MOSFET circuits
Content Type	Text
Resource Type	Article

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