NDLI: Retention time improvement by fast-pull and fast-cool (FPFC) ingot growing combined with proper arrangement of subsequent thermal budget for 0.18 /spl mu/m DRAM cell and beyond

Content Provider	IEEE Xplore Digital Library
Author	Kim Ilgweon Kwon Jaesoon Lee Kyosung Kim Dongchan Shin Jungho Choy Junho Kim Namsung Yang Heesik Cheon Youngil Park Juseok Kwon Woyup Song Youngjin Park Daeyoung Kim Jibum
Copyright Year	2001
Description	Author affiliation: Memory R&D Div., Hyundai Electron. Co. Ltd., Chungbuk, South Korea (Kim Ilgweon)
Abstract	The denudation scheme based on vacancy-assisted BMD (bulk micro defect) formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI (shallow trench isolation). In this paper, we report the denudation scheme employing low-cost FPFC (fast-pull and fast-cool) ingot growth, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.
Starting Page	125
Ending Page	126
File Size	355176
Page Count	2
File Format	PDF
ISBN	4891140127
DOI	10.1109/VLSIT.2001.934981
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-06-12
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Applied Phys.
Subject Keyword	Annealing Silicon Random access memory Gettering Costs Cooling Stress Hydrogen Oxidation Research and development
Content Type	Text
Resource Type	Article

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Retention time improvement by fast-pull and fast-cool (FPFC) ingot growing combined with proper arrangement of subsequent thermal budget for 0.18 /spl mu/m DRAM cell and beyond