NDLI: Barrier-metal-free (BMF), Cu dual-damascene interconnects with Cu-epi-contacts buried in anti-diffusive, low-k organic film

Content Provider	IEEE Xplore Digital Library
Author	Tada, M. Ohtake, H. Harada, Y. Hiroi, M. Saito, S. Onodera, T. Furutake, N. Kawahara, J. Tagami, M. Kinoshita, K. Fukai, T. Mogami, T. Hayashi, Y.
Copyright Year	2001
Description	Author affiliation: NEC Corp., Sagamihara, Japan (Tada, M.)
Abstract	Barrier-metal-free (BMF) Cu dual-damascene interconnects (DDI) are fabricated in the plasma-polymerized, divinyl siloxane bis-benzocyclobutene (p-BCB: k=2.6) polymer film, which is characterised by anti-diffusive characteristics for the Cu. The BMF-structure has inter-line leakage current as low as that of a conventional barrier-inserted structure and is estimated to retain the high insulating properties for over 10 years under 1 MV/cm stress. The BMF-structure also derives Cu-epi-contacts, reducing the via-resistance to 50% of that of the conventional Cu/barrier/Cu contacts. The effective dielectric constant was k/sub eff/=3.1, including very thin SiN etch-stop-layers, accomplishing 20% faster CMOS device operation compared to that of the conventional Cu-DDI in the SiO/sub 2/ with Ta-TaN barriers. The BMF Cu-DDIs buried directly in the p-BCB film is one of the ultimate structures for high performance, 0.1 /spl mu/m-CMOS devices and beyond.
Starting Page	13
Ending Page	14
File Size	425460
Page Count	2
File Format	PDF
ISBN	4891140127
DOI	10.1109/VLSIT.2001.934923
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-06-12
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Applied Phys.
Subject Keyword	Plasma properties Plasma applications Polymer films Leakage current Dielectrics and electrical insulation Plastic insulation Stress Dielectric constant Silicon compounds Etching
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Cu dual damascene interconnects with in-situ fluorinated carbon-nitride (FCN: -C=N(F)-) barrier layers in low-k organic film

Highly thermal-stable, plasma-polymerized BCB polymer film (k=2.6) for Cu dual-damascene interconnects

Integration of Cu/low-k dual-damascene interconnects with a porous PAE/SiOC hybrid structure for 65 nm-node high performance eDRAM

TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier

Advanced metal and dielectric barrier cap films for Cu low k interconnects

A self-aligned cap technology for Cu damascene interconnects by MO-CVD ZrN film

Robust 130 mn-node Cu dual damascene technology with low-k barrier SiCN

Dual damascene patterning of polymer interlayer dielectrics

TDDB degradation analysis using Ea of leakage current for reliable porous CVD SiOC(k=2.45)/Cu interconnects

Barrier-metal-free (BMF), Cu dual-damascene interconnects with Cu-epi-contacts buried in anti-diffusive, low-k organic film

Similar Documents

Cu dual damascene interconnects with in-situ fluorinated carbon-nitride (FCN: -C=N(F)-) barrier layers in low-k organic film

Highly thermal-stable, plasma-polymerized BCB polymer film (k=2.6) for Cu dual-damascene interconnects

Integration of Cu/low-k dual-damascene interconnects with a porous PAE/SiOC hybrid structure for 65 nm-node high performance eDRAM

TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier

Advanced metal and dielectric barrier cap films for Cu low k interconnects

A self-aligned cap technology for Cu damascene interconnects by MO-CVD ZrN film

Robust 130 mn-node Cu dual damascene technology with low-k barrier SiCN

Dual damascene patterning of polymer interlayer dielectrics

TDDB degradation analysis using Ea of leakage current for reliable porous CVD SiOC(k=2.45)/Cu interconnects

Barrier-metal-free (BMF), Cu dual-damascene interconnects with Cu-epi-contacts buried in anti-diffusive, low-k organic film