NDLI: Technological challenges of advanced CMOS processing and their impact on design aspects

Content Provider	IEEE Xplore Digital Library
Author	Claeys, C.
Copyright Year	2004
Description	Author affiliation: IMEC, Leuven, Belgium (Claeys, C.)
Abstract	The International Technology Roadmap for Semiconductors (ITRS) foresees the production of sub 10 nm gate length devices before 2016. To achieve this, both front- and back-end processing have to face major technological challenges and innovations. Lithography, device isolation, gate stack, shallow junctions, device engineering, high- and low-k dielectrics and interconnect schemes are hot research issues necessitating a global collaboration and the formation of appropriate platforms for joint research and development. Non-standard materials will have to be introduced and the use of non-classical device architectures will be required. This paper reviews some of the on-going research efforts to come to cost effective solutions forming the backbone for future technology nodes. Special attention is given to the impact of these technological innovations on design aspects. An outlook is also given of the emerging technologies that are at the basis of the switch over from micro-to nanoelectronics.
Sponsorship	VLSI Soc. of India Minist. of Inf. and Commun. Technol., Gov. of India IEEE Electron Devices Soc. IEEE Circuits and Syst. Soc. Tata Consultancy Services Texas Instruments Inc. Nat. Semiconductor Intel Synopsys Cypress Semiconductor Corp. Infineon Technol. Cadence Conexant
Starting Page	275
Ending Page	282
File Size	383328
Page Count	8
File Format	PDF
ISBN	0769520723
DOI	10.1109/ICVD.2004.1260936
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-01-09
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology CMOS process Isolation technology Technological innovation Switches Production Face Lithography Dielectric devices International collaboration
Content Type	Text
Resource Type	Article

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