NDLI: Characterization of the time-dependent reliability fallout as a function of yield for a 130nm SRAM device and application to optimize production burn-in

Content Provider	IEEE Xplore Digital Library
Author	Forbes, K.R. Schani, P.
Copyright Year	2004
Description	Author affiliation: Motorola Semicond. Product Sector, Austin, TX, USA (Forbes, K.R.; Schani, P.)
Abstract	A model is presented to optimize burn-in time based on product yield. A relationship between yield and reliability is developed and demonstrated with tests on a 130nm SRAM test device. Voltage and thermal acceleration are added to this model to appropriately scale predictions to product use conditions. High-voltage test screening is found to have a similar effect as burn-in in reducing infant mortality and thus can also be incorporated into this model. A conditional reliability model is needed to model the effects of both burn-in and high-voltage screening; these effects cannot be modeled as if they simply reduce the defectivity of the population. This approach can be used to predict the amount of high-voltage test screening and burn-in needed in order to qualify a production device built with the same technology.
Starting Page	165
Ending Page	170
File Size	403674
Page Count	6
File Format	PDF
ISBN	078038315X
DOI	10.1109/RELPHY.2004.1315318
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-04-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Production Testing Voltage Acceleration Semiconductor device manufacture Predictive models Semiconductor device modeling CMOS technology Costs
Content Type	Text
Resource Type	Article

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