NDLI: Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric

Content Provider	IEEE Xplore Digital Library
Author	Filippi, R.G. McGrath, J.F. Shaw, T.M. Murray, C.E. Rathore, H.S. McLaughlin, P.S. McGahay, V. Nicholson, L. Wang, P.-C. Lloyd, J.R. Lane, M. Rosenberg, R. Liu, X. Wang, Y.-Y. Landers, W. Spooner, T. Demarest, J.J. Engel, B.H. Gill, J. Goth, G. Barth, E. Biery, G. Davis, C.R. Wachnik, R.A. Goldblatt, R. Ivers, T. Swinton, A. Barile, C. Aitken, J.
Copyright Year	2004
Description	Author affiliation: IBM Microelectron. Div., Hopewell Junction, NY, USA (Filippi, R.G.; McGrath, J.F.)
Abstract	The reliability of a stacked via chain stressed under various thermal cycle conditions is described. The chain consists of Cu Dual Damascene metallization with SiLK (trademark of Dow Chemical) as the organic low-k dielectric. Failure analysis indicates that cracks form in the Cu vias during thermal cycle stress. Due to the presence of two failure modes, the thermal cycle statistical behavior is described by a bimodal lognormal failure distribution. The thermal cycle lifetime exhibits a strong dependence on the temperature range and a rather weak dependence, on the maximum temperature in the cycle. Evidence of a threshold temperature range below which thermal cycle fails should not occur as well as a correlation between the test structure yield and reliability are also reported.
Starting Page	61
Ending Page	67
File Size	534743
Page Count	7
File Format	PDF
ISBN	078038315X
DOI	10.1109/RELPHY.2004.1315302
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-04-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Metallization Dielectrics Thermal stresses Temperature distribution Temperature dependence Trademarks Organic chemicals Failure analysis Testing
Content Type	Text
Resource Type	Article

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