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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bazzoli, S. Girard, S. Ferlet-Cavrois, V. Baggio, J. Paillet, P. Duhamel, O. |
| Copyright Year | 2007 |
| Description | Author affiliation: Commissariat a l'Energie Atomique, Bruyeres le Chatel, France (Bazzoli, S.; Girard, S.; Ferlet-Cavrois, V.; Baggio, J.; Paillet, P.; Duhamel, O.) |
| Abstract | Researches on prototype AlGaN/GaN transistors provided evidence for their tolerance to cumulated dose effects. However, only few studies have been done to evaluate their sensitivity to single event effects (SEE). This paper reports SEE test results on a commercial GaN high electron mobility transistor with 14 MeV neutron and heavy ion irradiations (N, Fe, Br, Xe). Results show that the component under test is not sensitive to single event burnout (SEB), however phenomenon similar to single event gate rupture (SEGR) was observed. The SEE test bench used for our experiments has been validated with measurement of SEB and SEGR on MOSFETs. |
| Starting Page | 1 |
| Ending Page | 5 |
| File Size | 3638687 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424417049 |
| ISSN | 03796566 |
| DOI | 10.1109/RADECS.2007.5205553 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-09-10 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFETs Gallium nitride Silicon Testing Prototypes Aluminum gallium nitride HEMTs MODFETs Neutrons Iron MOSFET GaN HFET Single Event Effect Single Event Burnout Single Event Gate Rupture |
| Content Type | Text |
| Resource Type | Article |
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