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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Balasubramanian, A. Amusan, O.A. Bhuva, B.L. Reed, R.A. Sternberg, A.L. Massengill, L.W. McMorrow, D. Nation, S.A. Melinger, J.S. |
| Copyright Year | 2007 |
| Description | Author affiliation: Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA (Balasubramanian, A.; Amusan, O.A.; Bhuva, B.L.; Reed, R.A.; Massengill, L.W.; Nation, S.A.) |
| Abstract | The presence of Single Event (SE) interconnect crosstalk has been demonstrated experimentally in the IBM 90 nm CMOS9SF process. Single and Two Photon pulsed laser experiments were performed to demonstrate this phenomenon. 3D mixed-mode simulations and modeling show SE interconnect crosstalk to depend on the interconnect length and on the amount of deposited charge. Simulations have been performed at the dual operating voltages used in this technology. Experimental and accompanying simulation results show this effect to increase SE susceptibility by increasing the vulnerable area and require evaluation to assure expected hardness levels. |
| Starting Page | 1 |
| Ending Page | 7 |
| File Size | 4964851 |
| Page Count | 7 |
| File Format | |
| ISBN | 9781424417049 |
| ISSN | 03796566 |
| DOI | 10.1109/RADECS.2007.5205507 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-09-10 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS technology Crosstalk Integrated circuit interconnections Capacitance Pulsed laser deposition Optical pulses Computational modeling Voltage Single event upset Radiation hardening technology computer aided design (TCAD) complementary metal-oxide-semiconductor (CMOS) interconnect crosstalk single event (SE) |
| Content Type | Text |
| Resource Type | Article |
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