NDLI: The role of water in the radiation response of wet and dry oxides

Content Provider	IEEE Xplore Digital Library
Author	Batyrev, I.G. Fleetwood, D.M. Schrimpf, R.D. Pantelides, S.T.
Copyright Year	2007
Description	Author affiliation: Dept. of Phys., Vanderbilt Univ., Nashville, TN, USA (Batyrev, I.G.; Pantelides, S.T.)
Abstract	We report results of first-principles calculations that explain why radiation-induced interface-trap density increases at a slower rate in wet versus dry oxides in the initial stages of interface-trap buildup. Similar effects are observed in MOS devices after exposure to elevated humidity and temperature or after non-hermetic aging. We explore the possible reactions responsible for passivation of dangling bonds near the $Si/SiO_{2}$ interface by water and elucidate a new energetically favorable path of the reaction. Prior to irradiation, the passivation of the dangling bonds happens either with formation of Si-H bonds and release of OH complexes, or with formation of Si-OH bonds and the release of H atoms. Both reactions have activation energies of ~0.9 eV and occur rarely at room temperatures. The OH complex is quite mobile, and can migrate along the interface and passivate dangling bonds via the formation of Si-OH bonds. After irradiation and release of protons, the Si-OH and SiH bonds may be formed with lower activation energy through passivation of a positively charged dangling bond by a water molecule. The presence of a hole at the dangling bond causes the resulting passivated SiOH bond and proton to have a lower energy than the initial water and dangling bond, and favors passivation of the dangling bonds. We discuss the relevance of the reactions for modeling the radiation response of wet and dry oxides, aging of MOS devices, and pre-irradiation elevated temperature stress.
Starting Page	1
Ending Page	6
File Size	3435172
Page Count	6
File Format	PDF
ISBN	9781424417049
ISSN	03796566
DOI	10.1109/RADECS.2007.5205535
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-10
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Passivation Annealing Oxidation MOS devices Aging Protons Current measurement Charge measurement Charge pumps dry oxides Interface traps first principle calculation radiation response water absorption passivation wet
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in