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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xue Lin Yanzhi Wang Pedram, M. |
| Copyright Year | 2014 |
| Description | Author affiliation: Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA (Xue Lin; Yanzhi Wang; Pedram, M.) |
| Abstract | Sub/near-threshold computing has been proposed for ultra-low power applications. FinFET devices are considered as an alternative for bulk CMOS devices due to the superior characteristics, which make FinFET an excellent candidate for ultra-low power designs. In this paper, we first present an improved analytical FinFET model covering both sub- and near-threshold regimes. This model accurately captures the drain current as a function of both the gate and drain voltages. Based on the accurate FinFET model, we provide a detailed analysis on stack sizing of FinFET logic cells, and derive the optimal stack depth in FinFET circuits. We also provide a delay optimization framework for the FinFET circuits in the sub/near-threshold region, based on the stack sizing analysis. To the best of our knowledge, this is the first work that provides in-depth analysis of the stack sizing of FinFET logic cells in the sub/near-threshold region based on the accurate FinFET modeling. Experimental results on the 32nm Predictive Technology Model for FinFET devices demonstrate the effectiveness of the proposed optimization framework. |
| Starting Page | 341 |
| Ending Page | 348 |
| File Size | 312183 |
| Page Count | 8 |
| File Format | |
| e-ISBN | 9781479939466 |
| DOI | 10.1109/ISQED.2014.6783346 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-03-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Logic gates FinFETs Semiconductor device modeling Delays Threshold voltage stack sizing FinFET device sub/near-threshold |
| Content Type | Text |
| Resource Type | Article |
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