NDLI: A multiple configuration 1.2 micron 64 K SRAM fabricated on SIMOX substrates with laser link redundancy

Content Provider	IEEE Xplore Digital Library
Author	Kraus, W.F. Lee, J.C.
Copyright Year	1989
Description	Author affiliation: Harris Semicond., Melbourne, FL, USA (Kraus, W.F.; Lee, J.C.)
Abstract	Summary form only given. A high-speed, radiation-hardened, architecturally configurable (single metal mask) 64 K SRAM is discussed. Two configurations, the 64 K1 and 8 K8, have been built and 100% functional dies have been tested. Typical measured chip enable access times are under 35 nS for the 64 K*1 version, with minimum write times of 15 ns. The process features 1.2- mu m minimum geometries and dual-level metal, single-level polysilicon interconnect. First metal pitch is 3.6 mu m, second metal pitch is 3.8 mu m, and polysilicon pitch is 2.6 mu m. 1.2- mu m contacts and 1.8- mu m vias are utilized for interlayer connections. A thin 0.4- mu m epitaxial layer is grown on a SIMOX (separation by implantation of oxygen) substrate allowing for fully bottomed source and drain areas. Lateral isolation is provided by vertical trenches. Nominal gate oxide thickness is 225 A. Laser opened second metal layer links are used to implement redundancy capability for yield improvement.
Starting Page	173
Ending Page	174
File Size	157193
Page Count	2
File Format	PDF
DOI	10.1109/SOI.1989.69819
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-10-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Substrates Decoding Redundancy Semiconductor lasers Electronics packaging Voltage Logic circuits Radiation hardening Optical design
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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