NDLI: Detailed charge pumping evaluation of SIMOX using gated P-I-N diodes

Content Provider	IEEE Xplore Digital Library
Author	Ouisse, T. Elewa, T. Cristoloveanu, S. Haddara, H. Borel, G. Ioannou, D.
Copyright Year	1989
Description	Author affiliation: LPCS, Grenoble, France (Ouisse, T.; Elewa, T.; Cristoloveanu, S.)
Abstract	Summary form only given. Results for 0.25- mu m-thick SIMOX (separation by implantation of oxygen) films synthesized by high-current implantation of oxygen atoms and annealing above 1300 degrees C are presented. The as-processed material has low background doping and behaves as a fully depleted film. Changing the base level of the pulse while maintaining its height constant allows evaluation of the threshold and flat-band voltages. The plot of the charge pumping (CP) current as a function of the drawn length of the gate provides Delta L and, therefore, the effective channel length. The method of extraction of these three parameters does not require any knowledge of the carrier mobility, channel doping or oxide thickness and thus represents a valuable alternative for technology control. The existence of bulk traps in the Si overlay is explored by pulsing the two gates simultaneously according to the principle of volume inversion. The method is validated by using both trapezoidal and triangular pulses and comparing results obtained in gated diodes and five-terminal transistors.
Starting Page	148
Ending Page	149
File Size	136311
Page Count	2
File Format	PDF
DOI	10.1109/SOI.1989.69808
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-10-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Charge pumps P-i-n diodes Interface states Doping Linear predictive coding Educational institutions Silicon on insulator technology Semiconductor films Capacitance Fabrication
Content Type	Text
Resource Type	Article

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Charge Pumping in Silicon on Insulator Structures using Gated P-I-N Diodes

Correlation of the leakage current and charge pumping in SIMOX gated diodes

Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

CHARGE PUMPING IN SILICON ON INSULATOR STRUCTURES USING GATED P-I-N DIODES

Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

Reliability of film thickness extraction through CV curves of SOI p-i-n gated diodes

Suppression of geometric component of charge-pumping current in SOI/MOSFETs

Fabrication and Characterization of the Charge-Plasma Diode

Cylindrical silicon-on-insulator microdosimeter: Charge collection characteristics

Detailed charge pumping evaluation of SIMOX using gated P-I-N diodes

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