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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Natsui, M. Suzuki, D. Sakimura, N. Nebashi, R. Tsuji, Y. Morioka, A. Sugibayashi, T. Miura, S. Honjo, H. Kinoshita, K. Ikeda, S. Endoh, T. Ohno, H. Hanyu, T. |
| Copyright Year | 2013 |
| Description | Author affiliation: Tohoku Univ., Sendai, Japan (Natsui, M.; Suzuki, D.; Kinoshita, K.; Ikeda, S.; Endoh, T.; Ohno, H.; Hanyu, T.) || NEC, Tsukuba, Japan (Sakimura, N.; Nebashi, R.; Tsuji, Y.; Morioka, A.; Sugibayashi, T.; Miura, S.; Honjo, H.) |
| Abstract | Nonvolatile logic-in-memory (NV-LIM) architecture [1], where magnetic tunnel junction (MTJ) devices [2] are distributed over a CMOS logic-circuit plane, has the potential of overcoming the serious power-consumption problem that has rapidly become a dominant constraint on the performance improvement of today's VLSI processors. Normally-off and instant-on capabilities with a small area penalty due to non-volatility and three-dimensional-stackability of MTJ devices in the above structure allow us to apply a power-gating technique in a fine temporal granularity, which can perfectly eliminate wasted power dissipation due to leakage current. The impact of embedding nonvolatile memory devices into a logic circuit was, however, demonstrated by using only small fabricated primitive logic-circuit elements [3], memory-like structures such as FPGA [4], or circuit simulation because of the lack of an established MTJ-oriented design flow reflecting the chip-fabrication environment, while larger-capacity and/or high-speed-access MRAM has been increasingly developed. In this paper, we present an MTJ/MOS-hybrid video coding hardware that uses a cycle-based power-gating technique for a practical-scale MTJ-based NV-LIM LSI, which is fully designed using the established semi-automated MTJ-oriented design flow. |
| Sponsorship | IEEE Solid-State Circuits Soc. |
| Starting Page | 194 |
| Ending Page | 195 |
| File Size | 265944 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781467345156 |
| ISSN | 01936530 |
| e-ISBN | 9781467345163 |
| DOI | 10.1109/ISSCC.2013.6487696 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-02-17 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Magnetic tunneling Nonvolatile memory Arrays Junctions Power supplies CMOS integrated circuits Very large scale integration |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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