NDLI: MEMS for space applications

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Mainstreaming of the SOI technology

Advanced Microelectronics: the role of SOI

Single chip wireless systems using SOI

A 1.8 V 2.5 GHz PLL using 0.18 /spl mu/m SOI/CMOS technology

A low power /spl Sigma//spl Delta/ analog-to-digital modulator with 50 MHz sampling rate in a 0.25 /spl mu/m SOI CMOS technology

1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers

A SOI current memory for analog signal processing at high temperature

A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology

Comparison between fully- and partially-depleted SOI MOSFET's for low-power radio-frequency applications

High frequency characterization of SOI dynamic threshold voltage MOS (DTMOS) transistors

Temperature dependence of AC floating body effects in PD SOI nMOS

Thermal modeling of thin-film SOI transistors

High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding

Threshold voltage design incompatibility between partially-depleted SOI and bulk CMOS transistors

The off leakage in SOI-MOS transistors and the impact on the standby current of ULSI's

'Self-body-biased' SOI MOSFET through 'depletion isolation effect'

Buried oxide fringing capacitance: a new physical model and its implication on SOI device scaling and architecture

Detailed analysis of the gate delay variability in partially depleted SOI CMOS circuits

SOI MOSFET fluctuation limits on gigascale integration (GSI)

Architecture and performance of 3-dimensional SOI circuits

An SOI single-electron transistor

Evidence of energetically-localized trap-states at SOI-BOX interface in high-dose SIMOX wafers

A body-contact SOI MOSFET model for circuit simulation

"Gated-diode" in SOI MOSFETs: a sensitive tool for characterizing the buried Si-SiO/sub 2/ interface

Novel 3-D structures [ICs]

Advances in silicon-on-insulator photonic integrated circuit (SOIPIC) technology

MEMS for space applications

Electrostatic discharge protection in silicon-on-insulator technology

A 0.5-V, 3-mW, 54/spl times/54-b multiplier with a triple-V/sub th/ CMOS/SIMOX circuit scheme

A novel 0.7 V two-port 6T SRAM memory cell structure with single-bit-line simultaneous read-and-write access (SBLSRWA) capability using partially-depleted SOI CMOS dynamic-threshold technique

A dynamic body discharge technique for SOI circuit applications

Frequency dependent behavior of a high performance dynamic register file in 1.8 V, 0.25 /spl mu/m SOI technology

Temperature dependent hysteretic propagation delay in FB SOI inverter chain

Mechanisms of dynamic pass leakage current in partially depleted SOI MOSFETs

Scalability of fully-depleted SOI technology into 0.13 /spl mu/m 1.2 V-1 V CMOS generation

Advanced silicide for sub-0.18 /spl mu/m CMOS on ultra-thin (35 /spl mu/m) SOI

Performance trade-offs of argon implanted SOI MOSFETs with In and Sb retrograde channel doping

Ultimately thin SOI MOSFETs: special characteristics and mechanisms

High performance sub-0.1 /spl mu/m SOI polysilicon spacer gate MOSFETs using large angle tilted implant for drain engineering

A RF power LDMOS device on SOI

Optimal double-gate MOSFETs: symmetrical or asymmetrical gates?

An SOI nano flash memory device

Building hybrid active pixels for CMOS imager on SOI substrate

IOS-a new type of materials combination for system-on-a chip preparation

Thin-layer SIMOX for future applications

Multi-layer SOI island technology by selective epitaxial growth for single-gate and double-gate MOSFETs

ELTRAN/sup (R)/ by water-jet splitting in stress-controlled porous Si

SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing

Thinning of Si in SOI wafers by the SC1 standard clean

SIMOX SOI surface smoothing for gate oxide integrity and reliability

Integrity of the gate oxide on the thin top Si layer in ITOX-SIMOX wafers

Defect analysis of patterned SOI material

Effect of single-step, high-oxygen-concentration annealing on buried oxide layer microstructure in post-implant-amorphized, low-dose SIMOX material

Study of Cu diffusion in ultra thin bonded SOI wafers evaluated by using radioactive isotope tracers

The effects of preparation conditions of SIMOX samples on the photoluminescence spectra of their buried oxide layer

Fractional implantation area effects on patterned ion-cut silicon layer transfer

Bulk-layout-compatible 0.18 /spl mu/m SOI-CMOS technology using body-fixed partial trench isolation (PTI)

Power amplifiers on thin-film-silicon-on-insulator (TFSOI) technology

Circuit simulator and compact model requisites for accurate simulation of AC floating body behaviour in PD SOI

1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199)

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1991 IEEE International SOI Conference Proceedings

MEMS for space applications

Content Provider	IEEE Xplore Digital Library
Author	Tang, T.K.
Copyright Year	1999
Abstract	Summary form only given. At NASA, the focus for smaller, less costly missions has encouraged the development of microspacecraft. MEMS technology advances in terms of sensors, propulsion systems, and instruments make the notion of a specialized microspacecraft feasible in the immediate future. Emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format, and is viewed as the next step in device and instrument miniaturization. MEMS technology has the potential to enable or enhance NASA missions in numerous ways. The technology allows component and system miniaturization, where the primary benefit is reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, with the greatest impact in performance, regardless of system size. Finally, with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink fundamental measurement paradigms. It is now possible to expand horizons from a single instrument perspective to one involving multi-node or distributed systems. Distributed systems and missions give a new system in which functionality is enabled by a multiplicity of elements. In the future, integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function and performance advantages. This presentation discusses recent developments and applications of MEMS technologies and devices for space applications.
Sponsorship	IEEE Electron Devices Soc
File Size	48098
File Format	PDF
ISBN	0780354567
ISSN	1078621X
DOI	10.1109/SOI.1999.819857
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-10-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices Space technology Instruments NASA Sensor systems Propulsion Micromachining Nanofabrication Microelectronics Availability
Content Type	Text
Resource Type	Article

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