NDLI: An SOI nano flash memory device

Content Provider	IEEE Xplore Digital Library
Author	Xiaohui Tang Baie, X. Bayot, V. Van de Wiele, F. Colinge, J.P.
Copyright Year	1999
Description	Author affiliation: Lab. for Microelectron., Katholieke Univ., Leuven, Belgium (Xiaohui Tang)
Abstract	Several nano flash memory devices have been reported in the literature (Nakajima et al. 1996; Guo et al. 1996; Welser et al. 1997). These devices are basically miniature EEPROM cells in which electrons are injected in a floating storage node by tunnel effect through an oxide layer. The variation of the potential of the floating node due to electron injection modifies the threshold voltage of a thin and narrow SOI MOSFET, which makes it possible to store information in the device. This paper describes the fabrication of an SOI nano flash memory device using Unibond/sup (R)/ wafers and e-beam lithography. The device can be programmed and erased using 5 V gate voltage pulses. The area of the active storage region is 150 nm/spl times/150 nm.
Sponsorship	IEEE Electron Devices Soc
Starting Page	100
Ending Page	101
File Size	124732
Page Count	2
File Format	PDF
ISBN	0780354567
ISSN	1078621X
DOI	10.1109/SOI.1999.819872
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-10-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Flash memory Silicon Electrons Oxidation Threshold voltage MOSFET circuits Fabrication Temperature measurement Microelectronics EPROM
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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