NDLI: Lateral emitter-controlled thyristor (LECT) on SOI

Content Provider	IEEE Xplore Digital Library
Author	Zhao, Y.-F. Huang, A.Q. Leung, Y.-K. Wong, S.S.
Copyright Year	1996
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA (Zhao, Y.-F.)
Abstract	Summary form only given. A new lateral power device on SOI called the lateral emitter controlled thyristor (LECT) is proposed, and simulation results are presented. The LECT has better forward voltage drop (V/sub F/), larger forward biased safe operating area (FBSOA) and reverse biased safe operating area (RBSOA) than the lateral IGBT (LIGBT). LECT implementation on a thin SOI layer is suitable for smart power IC applications. The device is composed of a lateral gate-controlled PNPN thyristor in series with a short channel lateral double-diffusion MOSFET (LDMOS). The gate of the LDMOS is tied together with the turn-on gate of the thyristor to form a single control gate. A P-channel MOSFET (PMOS) is formed between the P base of the thyristor and the P-body of LDMOS, and the PMOS gate is tied to the LECT cathode. Two-dimensional simulations with MEDICI were carried out for a 300 V LECT structure to verify its operation. The forward voltage drop of the LECT and of a similar LIGBT are compared for two gate voltages. Compared at 100 A/cm/sup 2/, the V/sub F/ of the LECT is 0.4 V less than that of the LIGBT at V/sub g/=15 V, and 1 V less at V/sub g/=10 V. The results clearly show that the LECT has three distinct operating regions: a thyristor-like forward conduction region, a high voltage current saturation region, and a third region at high voltage/high current before it reaches its FBSOA point. The LECT has a much larger FBSOA than the LIGBT. This paper presents a detailed analysis of the mechanism for current saturation and the factors that determine the FBSOA and the RBSOA of the LECT.
Sponsorship	IEEE Electron Devices Soc
Starting Page	55
Ending Page	56
File Size	223580
Page Count	2
File Format	PDF
ISBN	0780345002
ISSN	1078621X
DOI	10.1109/SOI.1998.723108
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thyristors Voltage Cathodes Medical simulation Anodes Equivalent circuits
Content Type	Text
Resource Type	Article

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