NDLI: Interface characterization of fully-depleted SOI MOSFET by a subthreshold I-V method

Content Provider	IEEE Xplore Digital Library
Author	Bin Yu Hsing-Jen Wann Assaderaghi, F. Mansun Chan Roa-Wen Chen Ping Ko Chenming Hu
Copyright Year	1994
Description	Author affiliation: Dept. of Electr. Eng., California Univ., Berkeley, CA, USA (Bin Yu; Hsing-Jen Wann; Assaderaghi, F.; Mansun Chan; Roa-Wen Chen; Ping Ko; Chenming Hu)
Abstract	Interface state densities can dramatically affect the performances of MOSFETs by causing threshold voltage shift and mobility degradation. In SOI structures, due to the complex multi-interface nature and small gate area, the interface state characterization still remains a very challenging problem. Conventional C-V method is not suitable for investigating interfaces in SOI MOS devices, mainly because of the large area needed and the high series resistance in thin-film. Several other measurement techniques based on currents rather than capacitance have been proposed. In this work, an evolved technique for characterizing interface state density in fully-depleted SOI MOSFETs is presented. By measuring subthreshold swing of the SOI MOSFETs, the interface state density can be determined. The distribution of both front- and back-interface state densities in the bandgap can be evaluated by applying a rigorous one-dimensional analytical model for FD-SOI MOSFETs operating in the weak inversion regime. In addition, this technique has been applied successfully to the comparison of interface qualities of various SOI wafers and the study of electrical stress effect. The SOI devices used in this study were n-channel and p-channel MOSFETs fabricated with submicron CMOS technology on both SIMOX and Bonded-and-Etchback SOI (BESOI) wafers.
Starting Page	63
Ending Page	64
File Size	193202
Page Count	2
File Format	PDF
ISBN	0780324064
DOI	10.1109/SOI.1994.514236
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-10-03
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Interface states CMOS technology Threshold voltage Degradation Capacitance-voltage characteristics MOS devices Thin film devices Measurement techniques Capacitance
Content Type	Text
Resource Type	Article

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