NDLI: First principles study on the switching mechanism in Resistance Random Access Memory devices

Content Provider	IEEE Xplore Digital Library
Author	Kasai, H. Aspera, S.M. Kishi, H. Awaya, N. Ohnishi, S. Tamai, Y.
Copyright Year	2011
Description	Author affiliation: Graduate School of Engineering, Osaka University, Precision Science & Technology and Applied Physics, Japan (Kasai, H.; Aspera, S.M.; Kishi, H.) \|\| Sharp Corporation, Corporate Research and Development Group, Hiroshima, Japan (Awaya, N.; Ohnishi, S.; Tamai, Y.)
Abstract	The role of Resistance Random Access Memory (RRAM) is recently becoming extremely important in the field of developing non-volatile memory devices. The foreseen relevance of RRAM in this field is attributed to the switching of the electronic properties from metal to insulator, and vice versa, of the transition metal oxides (TMOs) included in RRAM by a set and reset pulse voltage. However, conclusive clarifications on the switching mechanism have not yet been fully realized. In this study, by using first principles calculation based on density functional theory, we investigated RRAM's switching mechanism through analysis of the change in the electronic properties of the bulk TMOs resulting from oxygen vacancies and charge carrier trapping for two known TMOs materials used in RRAM, HfO and CoO. We found that an oxygen vacancy row with charge carrier trapping creates a conduction path and therefore the transition from insulator to metal. In addition, we perform calculations for slab models of the TMOs in contact with Ta electrodes and hence investigate the effects of oxygen vacancies at the interface between the TMO layers and the electrode layer. From the obtained results, we confirmed that our investigations on activation energy barrier for oxygen vacancy migration are consistent with the experimental data of voltages required for switching.
Starting Page	211
Ending Page	214
File Size	443689
Page Count	4
File Format	PDF
ISBN	9781612844190
ISSN	19461569
e-ISBN	9781612844183
DOI	10.1109/SISPAD.2011.6035088
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-08
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hafnium compounds Switches Charge carrier processes Resistance Insulators First Principles Study RRAM TMO
Content Type	Text
Resource Type	Article

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