NDLI: Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices

Content Provider	IEEE Xplore Digital Library
Author	Joo Hyung You Hyun Woo Kim Dong Hun Kim Tae Whan Kim Keun Woo Lee
Copyright Year	2011
Description	Author affiliation: Research and Development Division, Hynix Semiconductor Inc., Icheon-si, Kyungki-do, 467-701, Korea (Keun Woo Lee) \|\| Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, Korea (Joo Hyung You; Hyun Woo Kim; Dong Hun Kim; Tae Whan Kim)
Abstract	The trap distribution in the silicon-nitride layer, which was estimated by using experimental results, was used to clarify the retention characteristics of TaN-Al-Si (TANOS) memory devices. The dependence of the trap density and distribution of the silicon nitride layer on the retention characteristics in TANOS memory devices was investigated by using the two-coupled rate equations together with the Shockley- Reed statistics. Simulation results showed that the retention characteristics in TANOS memory devices increased with increasing trap density near and above the Fermi-level in the silicon-nitride layer. The simulation results for the retention characteristics of TANOS memory devices were in reasonable agreement with the experimental results. These observations can help improve understanding of the retention mechanisms and the reliability problems in charge trap flash (CTF) memory devices.
Starting Page	199
Ending Page	202
File Size	469436
Page Count	4
File Format	PDF
ISBN	9781612844190
ISSN	19461569
e-ISBN	9781612844183
DOI	10.1109/SISPAD.2011.6035085
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-08
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron traps Silicon Threshold voltage Energy states Flash memory Gaussian distribution Nonvolatile memory silicon nitride TANOS flash memory retention characteristics trap distribution
Content Type	Text
Resource Type	Article

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