NDLI: Simulation of channel electron mobility due to scattering with interfacial phonon-plasmon modes in silicon nanowire under the presence of high-k oxide and metal gate

Content Provider	IEEE Xplore Digital Library
Author	Kai Xiu
Copyright Year	2011
Description	Author affiliation: IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, USA (Kai Xiu)
Abstract	The channel electron mobility of a 1D nanowire due to scattering with interfacial phonon-plasmon modes arising from the high-k dielectric material under the presence of polysilicon or metal gate is studied in this manuscript. We solved the dispersion relationship of the coupled modes and the accompanying effective scattering potential for carrier relaxation in the channel. The resulting mobility was calculated for a series of geometrical configurations with polysilicon/metal as the gate material. We found that for the polysilicon gate case the mechanism gives rise to a significantly low mobility in the low to mid electrical field range, and that wires with smaller diameter suffer more heavily. Our simulation also reveals that metal gate effectively mitigates the effect through the suppression of effective scattering field.
Starting Page	35
Ending Page	38
File Size	249423
Page Count	4
File Format	PDF
ISBN	9781612844190
ISSN	19461569
e-ISBN	9781612844183
DOI	10.1109/SISPAD.2011.6035043
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-08
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Metals Phonons Silicon Plasmons Dielectrics Scattering HKMG silicon nanowire mobility high-k silicon metal gate soft phonon plasmon dielectrics dynamic screening
Content Type	Text
Resource Type	Article

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