NDLI: Quantum electronic trap-to-band transitions in chalcogenides induced by electron-electron interaction

Content Provider	IEEE Xplore Digital Library
Author	Buscemi, F. Piccinini, E. Giovanardi, F. Rudan, M. Brunetti, R. Jacoboni, C.
Copyright Year	2011
Description	Author affiliation: Physics Department, University of Modena and Reggio Emilia, and CNR-Institute of NanoSciences S3, Via Campi 213/A, I-41125, Italy (Brunetti, R.; Jacoboni, C.) \|\| ARCES Research Center, and Department of Electronics, Computer Science and Systems, University of Bologna, Viale Risorgimento 2, I-40136, Italy (Buscemi, F.; Piccinini, E.; Giovanardi, F.; Rudan, M.)
Abstract	Charge transport in amorphous-chalcogenide materials used for manufacturing memory devices is determined by two mechanisms: hopping of trapped electrons and motion of band electrons. Electron-electron interaction is investigated here as one of the mechanisms mainly responsible for the trap-to-band transitions. The problem is tackled using a fully quantum-mechanical approach by numerically solving the two-particle, time-dependent Schrödinger equation. The results show that the detrapping probability increases with the current density, this supporting the interpretation by which successive electron-electron scattering events may play a major role in the determining the snap-back of the I(V) characteristic in this kind of materials.
Starting Page	67
Ending Page	70
File Size	138519
Page Count	4
File Format	PDF
ISBN	9781612844190
ISSN	19461569
e-ISBN	9781612844183
DOI	10.1109/SISPAD.2011.6035051
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-08
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron traps Scattering Current density Resistance Equations Materials
Content Type	Text
Resource Type	Article

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