NDLI: Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO gate stack

Content Provider	IEEE Xplore Digital Library
Author	Hui-Wen Cheng Yiming Li Chun-Yen Yiu Hsin-Wen Su
Copyright Year	2011
Description	Author affiliation: Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (Hsin-Wen Su) \|\| Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (Hui-Wen Cheng; Yiming Li; Chun-Yen Yiu)
Abstract	In this study, the work function fluctuation (WKF) induced device variability in 16-nm-gate bulk and SOI FinFETs is for the first time explored by using an experimentally calibrated three-dimensional (3D) device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region of device to examine the associated electrostatic and carriers' transport properties, concurrently capturing random grain's size, number and position fluctuations. Both bulk and SOI FinFETs with TiN/HfO gate stack are simulated, based upon experimentally available data. The approach of localized WKF simulation method is thus intensively performed to explore the device's variability including comparison between bulk and SOI FinFETs. The results of this study enable us to get an even reasonably accurate account of the random grain's number, position and size effects.
Starting Page	287
Ending Page	290
File Size	871887
Page Count	4
File Format	PDF
ISBN	9781612844190
ISSN	19461569
e-ISBN	9781612844183
DOI	10.1109/SISPAD.2011.6035025
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-08
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFETs Logic gates Tin Fluctuations Grain size Nanoscale devices 3D device simulation localized work function fluctuation size of metal grain random grain number random grain position bulk FinFET SOI FinFET aspect ratio threshold voltage fluctuation on/off-state current fluctuation
Content Type	Text
Resource Type	Article

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