NDLI: Proposal of the method for high efficiency DC-DC converters and the efficiency limit restricted by silicon properties

Content Provider	IEEE Xplore Digital Library
Author	Kawaguchi, Y. Yamaguchi, Y. Kanie, S. Baba, A. Nakagawa, A.
Copyright Year	2008
Description	Author affiliation: Discrete Semicond. Div., Toshiba Corp. Semicond. Co., Kawasaki (Kawaguchi, Y.; Yamaguchi, Y.)
Abstract	In this paper, we analyzed details of power loss in DC-DC converters and proposed the method for improving efficiency. Before the analysis was carried out, we verified the accuracy of SPICE simulation for DC-DC converters by comparing with measured data and a result from 3D electromagnetic simulation which can solve the entire device package and PCB directly. After that, we analyzed the details of the influence of various parasitic inductances on the efficiency by the circuit simulator. The power loss does not decrease monotonically as the parasitic inductance decrease. This is because high side turn-on loss increases as the parasitic inductance decreases. A large voltage drop occurs across the high side MOSFET, because the parasitic inductance is too small to restrict the di/dt. The total parasitic inductance in the main current path for the MCM module is chosen to be equivalent to the optimum value. One of the most important design parameters is the total resistance in the gate driver circuit for power MOSFETs because it is important to reduce the gate resistance in order to reduce high side switching loss and to achieve a short dead time without causing self-turn-on of the low side MOSFET. Finally, we discussed maximum DC-DC converter efficiency restricted by silicon limit. It is predicted that the maximum efficiency for ideal silicon MOSFET is 96% for 1 MHz. The results predict that the switching frequency is limited to as high as 5 MHz, if we assume more than 86% conversion efficiency, as far as the large current, 12 V input voltage VRM are concerned.
Starting Page	147
Ending Page	152
File Size	482561
Page Count	6
File Format	PDF
ISBN	9781424416677
ISSN	02759306
DOI	10.1109/PESC.2008.4591915
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-15
Publisher Place	Greece
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Logic gates Integrated circuit modeling Inductance Converters Power MOSFET Silicon
Content Type	Text
Resource Type	Article

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