NDLI: A new method of improving ONO integrity using low temperature APM in 0.15 /spl mu/m flash memory

Content Provider	IEEE Xplore Digital Library
Author	Jing Zhao Kumfai Wong Junsyong Ng Mukhopadhyay, M. Wenyi Zhang Youngseon You Kant Shukla, D. Pey, K.
Copyright Year	2005
Description	Author affiliation: Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore (Jing Zhao; Kumfai Wong; Junsyong Ng; Mukhopadhyay, M.; Wenyi Zhang; Youngseon You; Kant Shukla, D.; Pey, K.)
Abstract	Oxide-nitride-oxide (ONO) film has been used as interpoly dielectric in 01.5 /spl mu/m stacked-gate flash memory in this work. It was found out that the yield of the flash products were strongly affected by inline ONO thickness. In order to improve the uniformity of the inline ONO thickness, the effects of a new method of low temperature APM clean on ONO film, including oxide loss, surface condition and the electrical properties of ONO have been studied. It is observed that better ONO integrity with less surface roughness, better uniformity, hence longer time dependent dielectric breakdown (TDDB) and stable yield can be achieved by using this new LT-APM cleaning method.
Sponsorship	IEEE Electron Devices Soc. IEEE Components Packaging and Manuf. Technol. Soc., Semicond. Equip. & Mater. Int. (SEMI) Soc. of Appl. Phys. of Japan
Starting Page	460
Ending Page	462
File Size	120919
Page Count	3
File Format	PDF
ISBN	0780391438
DOI	10.1109/ISSM.2005.1513405
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Flash memory Dielectrics Surface cleaning Rough surfaces Surface roughness Nonvolatile memory Fluctuations CMOS technology Chemicals
Content Type	Text
Resource Type	Article

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