NDLI: Effect of checker board failure on yield improvement in 0.15 /spl mu/m embedded flash memory

Content Provider	IEEE Xplore Digital Library
Author	Nam Sung Kim Mukhopadhyay, M. Wong Wing Yew Yee Chieng Tan Kyeong Sik Lee Hua Eng Low Jing Zhao van der Linde, R. Shukla, D. Sang Hyun Han Kin San Pey
Copyright Year	2005
Description	Author affiliation: Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore, Singapore (Nam Sung Kim; Mukhopadhyay, M.; Wong Wing Yew; Yee Chieng Tan; Kyeong Sik Lee; Hua Eng Low; Jing Zhao)
Abstract	This work is aimed at the yield improvement with root cause definition on checker board (CB) failure inside flash matrix cell by key process optimizations as well as a novel process introduction in 0.15 /spl mu/m embedded flash memory device. It is reported that the root cause of very gross CB failure was mainly due to the abnormal leakage from flash access transistor (FAT) inside flash matrix cell array and high voltage (HV) devices in the charge pump & decoder system. Furthermore, it turned out that threshold voltage (Vt window) for programming and erasing is one of big modulators to cause CB failures. To tackle these problems, a new approach to reduce HV device leakage by introducing Ti-rich TiN film as CoSi/sub 2/ capping layer is proposed and confirmed by direct experiment. Concurrently, the optimizations of both FAT punch-through implantation and post-cleaning process just after the formation of ONO film as inter-poly dielectric in stacked-gate (FG/CG) were carried out so as to minimize FAT off current and to improve Vt window, respectively, leading to the successful elimination of CB failures.
Sponsorship	IEEE Electron Devices Soc. IEEE Components Packaging and Manuf. Technol. Soc., Semicond. Equip. & Mater. Int. (SEMI) Soc. of Appl. Phys. of Japan
Starting Page	237
Ending Page	240
File Size	483428
Page Count	4
File Format	PDF
ISBN	0780391438
DOI	10.1109/ISSM.2005.1513345
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Flash memory Voltage Charge pumps Decoding Character generation Logic devices Flash memory cells Logic arrays Nonvolatile memory Silicon
Content Type	Text
Resource Type	Article

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