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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shimazaki, A. Ito, S. Miyazaki, K. Matsumura, T. |
| Copyright Year | 2005 |
| Description | Author affiliation: Toshiba Corp., Yokohama, Japan (Shimazaki, A.; Ito, S.; Miyazaki, K.; Matsumura, T.) |
| Abstract | Total reflection X-ray fluorescence (TXRF) spectroscopy is well known as on-line monitoring system for ULSI manufacturing line, but it is not useful for quantifying less than 10/sup 10/ atoms/cm/sup 2/ metallic contamination because of its insufficient sensitivity. We developed a practical method named "VPT-TXRF" using vapor phase treatment (VPT) for quantifying metallic contaminants as low as 10/sup 9/ atoms/cm/sup 2/ on silicon wafer surface with TXRF system. One important aspect of this method is that high sensitivity was achieved within a practical measuring time of 500 seconds while maintaining the original surface conditions of the wafers. We are convinced that this method will become the most useful monitoring method for critical process contamination of the coming ULSI manufacturing line. |
| Sponsorship | IEEE Electron Devices Soc. IEEE Components Packaging and Manuf. Technol. Soc., Semicond. Equip. & Mater. Int. (SEMI) Soc. of Appl. Phys. of Japan |
| Starting Page | 456 |
| Ending Page | 459 |
| File Size | 743922 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780391438 |
| DOI | 10.1109/ISSM.2005.1513404 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-09-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Surface contamination Ultra large scale integration Reflection Fluorescence Spectroscopy Monitoring Manufacturing Atomic measurements Surface treatment |
| Content Type | Text |
| Resource Type | Article |
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