NDLI: Piezoelectric coupling constant in epitaxial Mg-doped GaN

Content Provider	IEEE Xplore Digital Library
Author	Xu, X. Woods, R.C.
Copyright Year	2005
Abstract	Although surface acoustic wave (SAW) devices using quartz and $LiNbO^{3}$ have proven highly successful, manufacturability would be considerably eased if SAW devices could be readily integrated with semiconductor devices. In a recent paper, Lee et al. proposed Mg-doped epitaxial GaN as suitable for SAW devices integrated with other III-V materials. The piezoelectric constant, or electromechanical coupling factor $(k_{2}),$ is one important parameter determining the acoustic behavior of a material. A large $k_{2}$ eases the design of wide-bandwidth low-loss SAW transducers. The piezoelectric constants are also of great interest in the design of strained-layer devices. For Mg-doped GaN, Lee et al. found $k_{2}$ = (4.3 plusmn 0.3)%. If confirmed, this would represent one of the highest values of k2 ever reported, and would revolutionize the design of acoustic devices integrated with III-V materials, since other III-V materials have much smaller $k_{2}.$ For example, GaAs has $k_{2}$ = 0.04%
Starting Page	402
Ending Page	403
File Size	161686
Page Count	2
File Format	PDF
ISBN	142440083X
DOI	10.1109/ISDRS.2005.1596156
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride III-V semiconductor materials Surface acoustic wave devices Acoustic materials Surface acoustic waves Acoustic devices Acoustic waves Semiconductor device manufacture Semiconductor devices Piezoelectric materials
Content Type	Text
Resource Type	Article

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