NDLI: Monitoring the Self-Heating in a High Frequency GaN HFET

Content Provider	IEEE Xplore Digital Library
Author	McAlister, S.P. Bardwell, J.A. Haffouz, S. Tang, H.
Copyright Year	2005
Description	Author affiliation: Inst. for Microstructural Sci., National Res. Council of Canada, Ottawa, Ont. (McAlister, S.P.; Bardwell, J.A.; Haffouz, S.; Tang, H.)
Abstract	Self-heating in GaN HFETs is a consequence of the high power and current levels common in such devices, and the limited ability of the substrates to conduct heat away from the devices. Most high frequency test devices are usually composed of 2 separate devices, laid out in a parallel electrical configuration but spatially symmetric with shared gate and drain contacts. The self-heating at high current densities causes the drain current to decrease as a function of drain bias, as the temperature of the active area increases above that of the substrate and device mount. Since a high frequency device is essentially 2 devices, one can bias the two parts to have different currents. Effectively one can then use one side of the device to monitor the self-heating and heat flow from the other side, if they are biased differently. This paper describes such experiments
Starting Page	248
Ending Page	249
File Size	227387
Page Count	2
File Format	PDF
ISBN	142440083X
DOI	10.1109/ISDRS.2005.1596077
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Monitoring Frequency Gallium nitride HEMTs MODFETs Voltage Temperature dependence Councils Testing Contacts
Content Type	Text
Resource Type	Article

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