NDLI: Electrical characterization of ultrathin atomic-layer-deposited Al/sub 2/O/sub 3/ on GaAs

Content Provider	IEEE Xplore Digital Library
Author	Lin, H.C. Ye, P.D. Wilk, G.D.
Copyright Year	2005
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN (Lin, H.C.; Ye, P.D.)
Abstract	$Al_{2}O_{3}$ is a widely used insulating material for gate dielectric, tunneling barrier and protection coating due to its excellent dielectric properties, strong adhesion to dissimilar materials, and its thermal and chemical stability. $Al_{2}O_{3$ has a high bandgap (~9 eV), a high breakdown electric field (5-10 MV/cm), a high permittivity (8.6-10) and high thermal stability (up to at least 1000 degC) and remains amorphous under typical processing conditions. The $Al_{2}O_{3}$ samples in our experiments are grown on n-type GaAs substrate by atomic layer deposition (ALD). ALD is an ultra-thin-film deposition technique based on sequences of self-limiting surface reactions enabling thickness control on atomic scale. Compared with other conventional methods, such as sputtering, oxidation of aluminum films or chemical vapor deposition (CVD), ALD provides much higher quality in terms of low defect/trap density, high conformity and uniformity. The ultrathin $Al_{2}O_{3}$ films were grown in an ASM Pulsar2000TM ALD module with trimethylaluminum and water as the reactants at 300 degC after an appropriate surface cleaning process
Starting Page	134
Ending Page	135
File Size	354801
Page Count	2
File Format	PDF
ISBN	142440083X
DOI	10.1109/ISDRS.2005.1596016
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Dielectric materials Chemical vapor deposition Thermal stability Atomic layer deposition Surface cleaning Dielectrics and electrical insulation Tunneling Protection Coatings
Content Type	Text
Resource Type	Article

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