NDLI: Physics of Textured III-Nitride Quantum Wells for Applications to LEDs

Content Provider	IEEE Xplore Digital Library
Author	Moustakas, T.D. Cabalu, J.S. Riyopoulus, S.
Copyright Year	2005
Description	Author affiliation: Boston Univ., MA (Moustakas, T.D.; Cabalu, J.S.)
Abstract	Summary form only given. In this paper we report the growth of GaN/AlGaN MQWs by MBE on atomically-smooth (0001) GaN templates and (0001)-oriented GaN templates with random surface texture. We show that this approach of employing nanotextured surfaces and "wrinkled" QWs leads to the improvement of both the internal quantum efficiency as well the extraction efficiency. AFM studies show that the MQWs replicate the texture of the GaN template. The PL and CL spectra from the smooth MQWs are red shifted and those of the textured MQWs are blue shifted with respect to the bulk GaN spectrum. These results are consistent with a reduction of polarization-induced electric fields in the parts of the textured MQWs which are not perpendicular to the [0001] polar direction. Furthermore, the PL intensity from the textured QWs, with well widths 7nm, was found to be about 700 times higher than that from similarly produced MQWs on smooth GaN templates. This significant enhancement in the PL intensity from the textured MQWs is attributed partly to the enhancement in light extraction efficiency and partly to the enhancement in internal quantum efficiency. One obvious source for the increase in internal quantum efficiency in the textured MQWs is the reduction of the quantum confined stark effect (QCSE) since the majority of the planes of the MQWs are not perpendicular to the polar direction. An additional source for the increase in internal quantum efficiency is the enhanced spontaneous emission at the wedges of intersecting planes of QWs, where they form quantum wire-like structures. These conclusions are supported by spot CL measurements taken in regions with different surface orientations. The employment and benefits of such textured MQWs in III-Nitride LEDs is discussed
Starting Page	220
Ending Page	220
File Size	157310
Page Count	1
File Format	PDF
ISBN	142440083X
DOI	10.1109/ISDRS.2005.1596062
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Physics Light emitting diodes Quantum well devices Gallium nitride Aluminum gallium nitride Surface texture Polarization Potential well Stark effect Spontaneous emission
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Enhancement of light extraction efficiency for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride microspheres

Polarization-engineered N-face III–V nitride quantum well LEDs

Optical properties of group-III nitride based quantum wells

Light extraction analysis of GaN-based LEDs

Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes

InGaN light-emitting diodes with the strained AlGaN/InGaN multiple quantum barriers

Light emission polarization properties of a-plane InGaN/GaN quantum wells light emitting diodes

Quantum Confine Stark Effect Suppressed Nanorod Structure Light Emitting Diode

Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

Physics of Textured III-Nitride Quantum Wells for Applications to LEDs

Similar Documents

Enhancement of light extraction efficiency for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride microspheres

Polarization-engineered N-face III–V nitride quantum well LEDs

Optical properties of group-III nitride based quantum wells

Light extraction analysis of GaN-based LEDs

Spontaneous recombination rate and luminescence efficiency of staggered InGaN quantum wells light emitting diodes

InGaN light-emitting diodes with the strained AlGaN/InGaN multiple quantum barriers

Light emission polarization properties of a-plane InGaN/GaN quantum wells light emitting diodes

Quantum Confine Stark Effect Suppressed Nanorod Structure Light Emitting Diode

Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

Physics of Textured III-Nitride Quantum Wells for Applications to LEDs