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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jiang-Yong Pan Zai-Fa Zhou Qi Gan Wen-Qin Xu |
| Copyright Year | 2013 |
| Description | Author affiliation: Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China (Zai-Fa Zhou) || Dept. of Electron. Sci. & Technol., Southeast Univ., Nanjing, China (Jiang-Yong Pan; Qi Gan; Wen-Qin Xu) |
| Abstract | The complex scattering process of the high-energy electron beams in resist is simulated by Monte Carlo method. The energy deposition distributions are presented under different exposure conditions. The three-dimensional (3-D) development profiles are obtained with the developing threshold model. It is found that, in the high energy range, higher electron beam energy, thinner resist, appropriate dose and lower substrate's atom number will cause lower proximity effect. Based on the simulations, we can explain the proximity effect and the dose control on proximity effect correction via the three-dimensional development profiles. The results will be useful to optimize the exposure conditions in electron beam lithography, and to provide more accurate data for proximity effect correction. |
| Sponsorship | IEEE Nanotechnol. Counc. |
| Starting Page | 622 |
| Ending Page | 626 |
| File Size | 662590 |
| Page Count | 5 |
| File Format | |
| ISSN | 19449399 |
| e-ISBN | 9781479906765 |
| DOI | 10.1109/NANO.2013.6720956 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-08-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resists Electron beams Proximity effects Scattering Substrates Lithography Monte Carlo methods |
| Content Type | Text |
| Resource Type | Article |
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