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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tran, P.D. Wolfrum, B. Stockmann, R. Offenhausser, A. Thierry, B. |
| Copyright Year | 2013 |
| Description | Author affiliation: Ian Wark Res. Inst., Univ. of South Australia, Mawson Lakes, SA, Australia (Tran, P.D.; Thierry, B.) || Peter Grunberg Inst., Forschungszentrum Juelich GmbH, Julich, Germany (Wolfrum, B.; Stockmann, R.; Offenhausser, A.) |
| Abstract | We present a robust wafer-scale top-down process for the fabrication of locally thinned-downed silicon nanowire (SiNW) devices. The fabrication is based on electron-beam lithography in combination with a two-step tetramethylammonium hydroxide (TMAH) wet etch. We optimized the etching profile of the TMAH process on silicon-on-insulator <;100> using isopropanol additive and temperature regulation, yielding very low and controllable etching rates and enabling the formation of ultra-smooth silicon morphology. The optimized TMAH etching process was confined using photolithography to the middle sections of silicon nanowire channels to achieve localized step-etching of the nanowires. The thinned silicon nanowires were addressed via metal contact lines in the final step of the fabrication. Preliminary current-voltage characterization in liquid demonstrated a p-channel field effect transistor behavior in depletion mode with a very high output current and negligible contact resistance. The proposed process provides an alternative route for reliable and reproducible fabrication of ultra-thin silicon nanowire devices. |
| Sponsorship | IEEE Nanotechnol. Counc. |
| Starting Page | 405 |
| Ending Page | 409 |
| File Size | 881426 |
| Page Count | 5 |
| File Format | |
| ISSN | 19449399 |
| e-ISBN | 9781479906765 |
| DOI | 10.1109/NANO.2013.6720826 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-08-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Etching Fabrication Nanoscale devices Silicon compounds Lithography |
| Content Type | Text |
| Resource Type | Article |
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