NDLI: Solution-based fabrication and characterization of a voltage inverter using random carbon nanotube networks

Content Provider	IEEE Xplore Digital Library
Author	Yan Duan Holmes, N.E. Ellard, A.L. Jianlong Gao Wei Xue
Copyright Year	2013
Description	Author affiliation: Sch. of Eng. & Comput. Sci., Washington State Univ., Vancouver, WA, USA (Yan Duan; Holmes, N.E.; Ellard, A.L.; Jianlong Gao; Wei Xue)
Abstract	Semiconducting carbon nanotubes (CNTs) are considered as one of the most promising candidates to replace silicon in future nano-electronics. Single-walled carbon nanotubes (SWNTs) have been used as an active channel material of field effect transistors (FETs). The nanotube-based circuit shows great potential in future electronics and computer technology. Integrating SWNT FETs to form logic gates-the basic units of integrated circuits (ICs)-needs both p- and n-type SWNT FETs. However, without doping, annealing or other special treatment, the obtained SWNT FETs are typically p-type. Here we report our SWNT-based logic gate, a voltage inverter, using simple fabrication methods. The components of the inverter logic gate, p-type and n-type SWNT FETs, are fabricated using low-cost materials and easy-to-control solution-based process. The introduction of polyethylenimine (PEI), a polymer with high electron-donating ability, to the device successfully converts the p-type FET to an n-type device. The resulting devices are air-stable outside a vacuum or an inert environment. Our results demonstrate that both p-type and n-type FETs produce typical field effects and the voltage inverter exhibits satisfactory switching characteristics. The combination of the simple fabrication methods, easy conversion of the transistors, and satisfactory logic gate switching performance can influence fundamental research in nano-materials and practical applications of nano-electronics.
Sponsorship	IEEE Nanotechnol. Counc.
Starting Page	393
Ending Page	396
File Size	546804
Page Count	4
File Format	PDF
ISSN	19449399
e-ISBN	9781479906765
DOI	10.1109/NANO.2013.6720863
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-08-05
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Field effect transistors Inverters Logic gates Fabrication Carbon nanotubes Coatings
Content Type	Text
Resource Type	Article

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