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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Saito, T. Suda, R. Shirakashi, J.-I. |
| Copyright Year | 2013 |
| Description | Author affiliation: Dept. of Electr. & Electron. Eng., Tokyo Univ. of Agric. & Technol., Koganei, Japan (Saito, T.; Suda, R.; Shirakashi, J.-I.) |
| Abstract | We report temperature distribution of graphene during Joule heating process using in-situ near-infrared (NIR) charge-coupled device (CCD) imaging system. Graphene layers were prepared using mechanical exfoliation of a pyrolytic graphite sheet (PGS), which is commercially available from an industrial materials company, and were then deposited on $SiO_{2}/Si$ substrates with approximately 780 nm thermally grown oxide. Thickness of the graphene layers was optically determined to be 20-80 nm using Fresnel theory. In order to investigate the heating process of the graphene, the temperature of the graphene under current flow was estimated using NIR microscopy with a CCD detector. A hand-made, in-situ experimental setup consists of an IR microscope, a NIR CCD, and an image enhancer. The CCD detector is mounted on the IR microscope with objective 20×. Heating experiments were carried out in obscurity. Joule heating process controlled with applied bias voltages was performed for the graphene in vacuum/ambient air, and the temperature distribution of the graphene during NIR emission was successfully studied by in-situ NIR CCD imaging system. The temperature of Joule-heated graphene was detected to be approximately 800 K. These results imply that NIR CCD imaging system is a useful tool for the investigation of temperature distribution of graphene. |
| Sponsorship | IEEE Nanotechnol. Counc. |
| Starting Page | 717 |
| Ending Page | 721 |
| File Size | 816191 |
| Page Count | 5 |
| File Format | |
| ISSN | 19449399 |
| e-ISBN | 9781479906765 |
| DOI | 10.1109/NANO.2013.6720865 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-08-05 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Graphene Heating Temperature distribution Probes Imaging Temperature measurement Charge coupled devices |
| Content Type | Text |
| Resource Type | Article |
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