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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mangla, Onkar Srivastava, M. P. |
| Copyright Year | 2011 |
| Description | Author affiliation: Department of Physics and Astrophysics, University of Delhi, 110007, India (Mangla, Onkar; Srivastava, M. P.) |
| Abstract | In the present work, extremely non-equilibrium, high temperature and high density argon plasma produced in dense plasma focus (DPF) device is used for producing ions of Gallium Nitride (GaN) from the solid disc of GaN placed at top of the anode in modified DPF device. Argon ions and GaN ions produced by focused plasma move vertically upward in a fountain like structure and GaN ions get deposited on the silicon substrates placed above top of the anode. This process of production of GaN ions for deposition on silicon substrates for obtaining nucleation and nanostructures has been obtained by single event focused plasma and ions produced in three consecutive focused plasma hitting the GaN disc. The structural properties of nanostructures are studied using the high resolution X-ray diffraction (HRXRD) which shows the peaks corresponding to the [100] and [102] plane of GaN in the first case and additional planes [002], [101], [110] and [103] for the second case. The grain size as obtained by Scherer's formula is of the order of 46 nanometers and 62 nanometers for [102] plane for nanostructures deposited in first and second cases respectively. The atomic force microscope (AFM) is used to investigate the morphological properties which show the formation of comet like nanostructures with its head having radius in the range of 10–50 nanometers in first case and formation of nanotubes with radius 50 nanometers in second case. Transmission electron microscope (TEM) study results are still awaited. |
| Starting Page | 1673 |
| Ending Page | 1676 |
| File Size | 408142 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457715143 |
| ISSN | 19449399 |
| e-ISBN | 9781457715167 |
| e-ISBN | 9781457715150 |
| DOI | 10.1109/NANO.2011.6144400 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-08-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium nitride Substrates Plasmas Ions Silicon Anodes Fabrication |
| Content Type | Text |
| Resource Type | Article |
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