NDLI: Analytic sheath resolution in high density plasma source simulations

Content Provider	IEEE Xplore Digital Library
Author	DiPeso, G. Vahedi, V.
Copyright Year	1995
Description	Author affiliation: Lawrence Livermore Nat. Lab., CA, USA (DiPeso, G.; Vahedi, V.)
Abstract	Summary form only given, as follows. Capacitive coupling involves the physics of external RF voltages coupling to the plasma through an oscillating sheath. For high density plasmas, the sheath dimension is much smaller than the scale lengths of density and field variation in the bulk of the plasma. To avoid costly numerical resolution of the sheath, we use analytic models to determine sheath voltage drops and power deposition due to Ohmic and stochastic heating at the sheaths. We use Metze's sheath model (1966) because it provides an ODE for the sheath voltage drop which can be directly incorporated into the numerical solution of Poisson equation. The model has been tested in the particle code PDPI by comparing simulations that resolve the sheath with simulations that use the analytic sheath. The analytic model reproduces the sheath drop fairly well. Alternatively, one can use Godyak and Sternberg's model (1990) for high frequency RF excitations. We use Lieberman's model (1988) to calculate Ohmic heating due to the substrate RF current and stochastic heating due to electrons bouncing of the oscillating substrate sheath. For a 13.56 MHz, 4 eV, 10 mTorr argon discharge 6 cm long with 8 inch substrate, P/sub stoc/=0.045(V/sub dc//T/sub c/) W and P/sub ohm/=0.078(V/sub dc//T/sub c/)/sup 1/2/ W, where V/sub dc/ is the time-average sheath voltage. These scalings indicate that stochastic and Ohmic heating at the substrate is typically only a few percent of the power coupled inductively.
Starting Page	127
Ending Page	128
File Size	225947
Page Count	2
File Format	PDF
ISBN	0780326695
ISSN	07309244
DOI	10.1109/PLASMA.1995.531544
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-06-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma sources Voltage Heating Radio frequency Plasma density Plasma sheaths Stochastic processes Analytical models Physics Poisson equations
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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