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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Alyoshkin, R.V. Karabanov, S.M. |
| Copyright Year | 1996 |
| Description | Author affiliation: Gelion Ltd., Ryazan, Russia (Alyoshkin, R.V.) |
| Abstract | Light-induced reversible changes in the a-Si:H surface microstructure have been detected with a new method based on the joint analysis of spectral ellipsometric and photometric measurements. These changes consist in the growth of a thin surface overlayer with light soaking correlated with a planar photoconductivity degradation. Some (small) systematic increase in the photoconductivity (but not in the dark conductivity) of as-deposited and light-soaked samples after the chemical etching of the surface with alkaline has also been found. However, numerical simulation indicates that the contribution of surface defects to planar conductivity reduction has to be much less compared to the bulk ones, and their effect in devices is expected to be stronger. In addition, we show that a thin layer with high trap concentration has to occur near the top n/i-interface in n-i-n-structures. The origin of the layer may be related to a hydrogen rearrangement (or reconfiguration). |
| Starting Page | 1161 |
| Ending Page | 1164 |
| File Size | 417878 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780331664 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.1996.564338 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-05-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Metastasis Amorphous silicon Photoconductivity Conductivity Microstructure Spectral analysis Photometry Degradation Chemicals Etching |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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