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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Venkatasubramanian, R. O'Quinn, B.C. Hills, J.S. Sharps, P.R. Timmons, M.L. Hutchby, J.A. Field, H. Ahrenkiel, R. Keyes, B. |
| Copyright Year | 1996 |
| Description | Author affiliation: Res. Triangle Inst., Research Triangle Park, NC, USA (Venkatasubramanian, R.) |
| Abstract | In this work, the authors present GaAs material and device-structure optimization studies that have led to achieve a open-circuit voltage of /spl sim/1 volt and a best solar cell efficiency of 18.2% under AM1.5G illumination, for a 4 cm/sup 2/ area GaAs cell on commercially-available, cast, optical-grade polycrystalline Ge substrate. This V/sub /spl infin// is almost 70 mV higher than on their previously-reported best GaAs cell on similar substrates. They discuss the growth of high-quality GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, important for obtaining good device performance. Optimization studies of the minority-carrier properties of GaAs layers on poly-Ge substrates have revealed that lifetime-spread across various grains can be reduced through the use of lower doping for the Al/sub 0.8/Ga/sub 0.2/As confinement layers. The cell-structure optimization procedures for improved V/sub /spl infin// and cell efficiency, include the use of thinner emitters, a spacer layer near the p/sup +/-n junction and an improved window layer. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77 K to 288 K) is presented indicating that the spacer reduces the tunneling contribution to dark current. |
| Starting Page | 31 |
| Ending Page | 36 |
| File Size | 589218 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780331664 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.1996.563940 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-05-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Photovoltaic cells Dark current Optical materials Voltage Lighting Optical devices Crystallization Doping Temperature |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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