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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ikeda, T. Ganguly, G. Matsuda, A. |
| Copyright Year | 1996 |
| Description | Author affiliation: Electrotech. Lab., Tsukuba, Japan (Ikeda, T.) |
| Abstract | The authors' results suggest that under conditions where the contribution of short lifetime radicals to growth has been minimized, the factors limiting further improvement of a-SiGe:H are (a) the low mobility of the Ge related precursor and (b) loss of surface hydrogen coverage due to rapid desorption from Ge-H sites. Therefore, preparing high quality a-SiGe:H requires high temperatures for increasing the precursor mobility and high deposition rates for reducing the effective hydrogen desorption rate. |
| Starting Page | 1157 |
| Ending Page | 1160 |
| File Size | 360453 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780331664 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.1996.564337 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-05-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Optical films Optical refraction Optical variables control Hydrogen Plasma temperature Image motion analysis Radio frequency Fluid flow Absorption Spectroscopy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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