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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fischer, D. Dubail, S. Selvan, J.A.A. Vaucher, N.P. Platz, R. Hof, Ch. Kroll, U. Meier, J. Torres, P. Keppner, H. Wyrsch, N. Goetz, M. Shah, A. Ufert, K.-D. |
| Copyright Year | 1996 |
| Description | Author affiliation: Institut de Microtechnique, Neuchatel Univ., Switzerland (Fischer, D.) |
| Abstract | Progress of solar cells based on plasma deposited hydrogenated microcrystalline silicon (/spl mu/c-Si:H), as well as on combined a-Si:H//spl mu/c-Si:H stacked "micromorph" solar cells is reported. /spl mu/c-Si:H p-i-n cells with a thickness of 3.6 /spl mu/m, deposited with the use of a gas-purifier, are shown to have a short-circuit current of over 25 mA/cm/sup 2/, and a stable efficiency of 7.7%. a-Si:H//spl mu/c-Si:H tandem cells with 13% initial, and with 10% degraded state efficiency are also demonstrated. In addition, methods to further increase the efficiency of combined a-Si:H//spl mu/c-Si:H solar cells are discussed. This includes the introduction of a ZnO reflector layer between a-Si:H and /spl mu/c-Si:H component cells, a new concept of which first experimental results are given. |
| Starting Page | 1053 |
| Ending Page | 1056 |
| File Size | 424331 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780331664 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.1996.564311 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-05-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photovoltaic cells Semiconductor thin films Crystallization Silicon Plasma temperature PIN photodiodes Substrates Frequency Plasma materials processing Absorption |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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