NDLI: Development of a semiconductor neutron dosimeter with a PIN Diode

Content Provider	IEEE Xplore Digital Library
Author	Namho Lee Seungho Kim Geunuck Youk Yangmo Kim
Copyright Year	2004
Description	Author affiliation: Korea Atomic Energy Res. Inst., Daejeon, South Korea (Namho Lee; Seungho Kim)
Abstract	When a Si PIN diode is exposed to fast neutrons, displacement damage to the Si lattice structure of the diode occurs. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of the PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper describes the development of a neutron sensor based on the phenomena of the displacement effect induced by neutron exposure. Multi PIN diode arrays with various intrinsic layer thickness and cross sections were fabricated. Irradiation tests, using an on-line-electronic-dosimetry system, have been shown that the increase in their intrinsic layer thickness along with the decrease in their cross-section area improves their detection sensitivity. The best neutron sensitivity was achieved when their intrinsic layer thickness was similar to the length of a side of the rectangular cross-section of the layer. The diodes showed a good linearity up to 1,000 cGy(Tissue). Its neutron sensitivity of up to 13mV/cGy was achieved at a 5 mA current pulse. It is three times higher sensitivity than that of similar commercial neutron diodes. Along with a good stability in their long-term-annealing performance, the newly developed PIN diodes show less dependency on neutron-beam direction than diodes with different geometry.
Starting Page	3473
Ending Page	3477
File Size	782148
Page Count	5
File Format	PDF
ISBN	0780382579
ISSN	10823654
DOI	10.1109/NSSMIC.2003.1352660
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-10-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Neutrons Semiconductor diodes Lattices Radiative recombination Conductivity Voltage Sensor phenomena and characterization System testing Linearity Stability
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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