NDLI: Heavy metal doping of CdTe crystals

Content Provider	IEEE Xplore Digital Library
Author	Saucedo, E. Fornaro, L. Sochinskii, N.V. Cuna, A. Corregidor, V. Granados, D. Dieguez, E.
Copyright Year	2004
Description	Author affiliation: Dept. Radiochem., Uruguay Univ., Montevideo, Uruguay (Saucedo, E.; Fornaro, L.)
Abstract	CdTe crystals doped with several heavy metals (Hg, Tl, Pb and Bi) in the concentration range of 10/sup 17/ - 10/sup 18/ at/cm/sup 3/ have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals was verified by chemical determination of etch pits density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration. Low temperature photoluminescence (PL) measurements of the crystals were performed in the 1.2 - 1.6 eV energy range. The crystal electrical properties were studied by Hall and I-V measurements. The obtained PL data show a domination of (D-X) and (DAP) lines in CdTe crystals, suggesting n-type conductivity and the presence of a compensation mechanism due to the heavy dopant incorporation. Investigating the 1.4 eV band, we obtained the Huang-Rhys parameter, the principal energy of zero phonon line and the energy of longitudinal optical phonon for each dopant. Impurities were measured by ICP-MS. A particular PL line at 1.473 eV, correlated to M/sub Te/ (M = heavy metal) defect centers, was found. It was found that the heavy metal doped CdTe crystals have resistivity values in the range 10/sup 7/ - 10/sup 10/ /spl Omega//spl middot/cm, with maximum values for Bi and Hg doped materials. Also these materials show a higher dark current stability than the ones doped with the other heavy metals. Detectors made from Hg doped crystals gave response to X and /spl gamma/ radiation.
Starting Page	3422
Ending Page	3424
File Size	462816
Page Count	3
File Format	PDF
ISBN	0780382579
ISSN	10823654
DOI	10.1109/NSSMIC.2003.1352647
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-10-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Crystals Mercury (metals) Plasma measurements Bismuth Plasma temperature Temperature measurement Conductivity Phonons Crystalline materials
Content Type	Text
Resource Type	Article

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