NDLI: Type-II InP/GaAsXSB1−X DHBTs with simultaneous FT and FMAX >340 Ghz fabricated by contact lithography

Content Provider	IEEE Xplore Digital Library
Author	Zeng, Y. Fluckiger, R. Ostinelli, O. Bolognesi, C.R.
Copyright Year	2010
Description	Author affiliation: Laboratory for Millimeter-Wave Electronics (MWE), Swiss Federal Institute of Technology (ETH-Zürich), Gloriastrasse 35, Zürich, Switzerland CH-8092 (Zeng, Y.; Fluckiger, R.; Ostinelli, O.; Bolognesi, C.R.)
Abstract	InP/GaAsSb/InP DHBTs with 125 and 150 nm collector thicknesses were fabricated by optical contact lithography in a standard triple mesa process. It is shown that a peak current-gain cut-off frequency fT = 343 GHz and maximum oscillation frequency fMAX = 351 GHz were simultaneously achieved on devices with an emitter area of 0.6 × 11.5 $μm^{2}$ and a 150 nm collector. To the best of our knowledge, these are the first InP/GaAsSb DHBTs to offer balanced figures-of-merit exceeding 300 GHz and a current gain β > 60. Similar devices with a thinner collector (125 nm) exhibit a peak fT = 377 GHz with fMAX = 318 GHz due to the interplay between a reduced collector transit time and the increased collector-base depletion capacitance. For the devices under study, the extrinsic collector-base capacitance was observed to have a small impact on fMAX. However, the base mesa over-etching is essential to reduce the extrinsic capacitance and thus improve fT.
Starting Page	1
Ending Page	3
File Size	151655
Page Count	3
File Format	PDF
ISBN	9781424459193
ISSN	10928669
e-ISBN	9781424459223
DOI	10.1109/ICIPRM.2010.5515950
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Gallium arsenide Double heterojunction bipolar transistors Lithography Capacitance Etching Stimulated emission Optical saturation Cutoff frequency Doping
Content Type	Text
Resource Type	Article

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