NDLI: An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT

Content Provider	IEEE Xplore Digital Library
Author	Che-Kai Lin Chao-Wei Lin Yi-Chun Wu Hsien-Chin Chiu
Copyright Year	2010
Description	Author affiliation: Department of Electronics Engineering, Chang Gung University, Taiwan, R.O.C (Che-Kai Lin; Chao-Wei Lin; Yi-Chun Wu; Hsien-Chin Chiu)
Abstract	In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (Gpv) and photoconductance gain (Gpc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.
Starting Page	1
Ending Page	4
File Size	443987
Page Count	4
File Format	PDF
ISBN	9781424459193
ISSN	10928669
e-ISBN	9781424459223
DOI	10.1109/ICIPRM.2010.5516402
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium compounds Indium gallium arsenide mHEMTs Indium tin oxide Optical films Gold Gallium arsenide Optical coupling Photovoltaic systems Solar power generation indium tin oxide Mixer photovoltaic effect photodetector phototransistor metamorphic high electron mobility transistor responsivity
Content Type	Text
Resource Type	Article

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