NDLI: $N^{+}-InGaAs/InAlAs$ recessed gates for InAs/AlSb HFET development

Content Provider	IEEE Xplore Digital Library
Author	Wei-Zhi He Heng-Kuang Lin Pei-Chin Chiu Jen-Inn Chyi Chih-Hsin Ko Ta-Ming Kuan Meng-Kuei Hsieh Wen-Chin Lee Wann, C.H.
Copyright Year	2010
Description	Author affiliation: Exploratory Research Division, Taiwan Semiconductor Manufacture Company, No. 8, Li-Hsin Rd. 6, Hsinchu City 30077, Taiwan, R. O. C. (Chih-Hsin Ko; Ta-Ming Kuan; Meng-Kuei Hsieh; Wen-Chin Lee; Wann, C.H.) \|\| Department of Electrical Engineering, National Central University, No. 300, Jhongda Rd., Chungli City, Taoyuan County 32001, Taiwan, R.O.C. (Wei-Zhi He; Heng-Kuang Lin; Pei-Chin Chiu; Jen-Inn Chyi)
Abstract	In this work, $N^{+}-InGaAs/InAlAs$ recessed gates for InAs/AlSb HFET development are presented. Highly doped $N^{+}-InGaAs$ cap layers are used to decrease the parasitic resistances in contact and access regions. As-grown modulation-doped epitaxy materials exhibit a Hall mobility of 14,200 $cm^{2}/V$ s and a sheet density of 6.15 $×10^{12}$ $cm^{−2},$ while a mobility of 14,600 $cm^{2}/V$ s and a sheet density of $5.61×10^{12}$ $cm^{−2}$ are shown after removal of the $N^{+}-InGaAs$ cap. Benefiting the energy band lowering using the highly doped cap layers, a low contact resistance of 0.06 Ω-mm is achieved. DC performances of IDSS=862mA/mm and gm, peak=927mS/mm and RF performances of fT=24GHz and fmax=51GHz are demonstrated in a 2.1μm-gate-length device. An fT-Lg product is as high as 51 GH-μm.
Starting Page	1
Ending Page	4
File Size	878257
Page Count	4
File Format	PDF
ISBN	9781424459193
ISSN	10928669
e-ISBN	9781424459223
DOI	10.1109/ICIPRM.2010.5516406
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium compounds HEMTs MODFETs Epitaxial layers Epitaxial growth Sheet materials Hall effect Contact resistance Decision support systems Radio frequency HFET InAs recessed gate
Content Type	Text
Resource Type	Article

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